Catalytic oxidation of InP
Identifieur interne : 002623 ( Chine/Analysis ); précédent : 002622; suivant : 002624Catalytic oxidation of InP
Auteurs : RBID : Pascal:97-0017282Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
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Pascal:97-0017282Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Catalytic oxidation of InP</title>
<author><name sortKey="Wei, J" uniqKey="Wei J">J. Wei</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Microelectronics Center, School of Electrical & Electronic Engineering, Nanyang Technological University</s1>
<s3>SGP</s3>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>Microelectronics Center, School of Electrical & Electronic Engineering, Nanyang Technological University</wicri:noRegion>
</affiliation>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institute of Semiconductors, Chinese Academy of Sciences</s1>
<s2>Beijing</s2>
<s3>CHN</s3>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Crystal Growth Center, Anna University</s1>
<s2>Madras</s2>
<s3>IND</s3>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Madras</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ahn, J" uniqKey="Ahn J">J. Ahn</name>
</author>
<author><name sortKey="Liu, X" uniqKey="Liu X">X. Liu</name>
</author>
<author><name sortKey="Sankaranayanan, K" uniqKey="Sankaranayanan K">K. Sankaranayanan</name>
</author>
<author><name sortKey="Hing, C L" uniqKey="Hing C">C. L. Hing</name>
</author>
</titleStmt>
<publicationStmt><idno type="inist">97-0017282</idno>
<date when="1996">1996</date>
<idno type="stanalyst">PASCAL 97-0017282 INIST</idno>
<idno type="RBID">Pascal:97-0017282</idno>
<idno type="wicri:Area/Main/Corpus">01A442</idno>
<idno type="wicri:Area/Main/Repository">01B203</idno>
<idno type="wicri:Area/Chine/Extraction">002623</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0232-1300</idno>
<title level="j" type="abbreviated">Cryst. res. technol. : (1979)</title>
<title level="j" type="main">Crystal research and technology : (1979)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term>
<term>Catalytic reaction</term>
<term>Chemical polishing</term>
<term>Experimental study</term>
<term>Indium Phosphides</term>
<term>Mechanical polishing</term>
<term>Oxidation</term>
<term>Wafer</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Réaction catalytique</term>
<term>Oxydation</term>
<term>Indium Phosphure</term>
<term>Composé binaire</term>
<term>Polissage chimique</term>
<term>Polissage mécanique</term>
<term>Pastille électronique</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0232-1300</s0>
</fA01>
<fA02 i1="01"><s0>CRTEDF</s0>
</fA02>
<fA03 i2="1"><s0>Cryst. res. technol. : (1979)</s0>
</fA03>
<fA05><s2>31</s2>
</fA05>
<fA06><s2>7</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Catalytic oxidation of InP</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>WEI (J.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>AHN (J.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LIU (X.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>SANKARANAYANAN (K.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>HING (C. L.)</s1>
</fA11>
<fA14 i1="01"><s1>Microelectronics Center, School of Electrical & Electronic Engineering, Nanyang Technological University</s1>
<s3>SGP</s3>
</fA14>
<fA14 i1="02"><s1>Institute of Semiconductors, Chinese Academy of Sciences</s1>
<s2>Beijing</s2>
<s3>CHN</s3>
</fA14>
<fA14 i1="03"><s1>Crystal Growth Center, Anna University</s1>
<s2>Madras</s2>
<s3>IND</s3>
</fA14>
<fA20><s2>K73-K77</s2>
</fA20>
<fA21><s1>1996</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13690</s2>
<s5>354000067137140200</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 1997 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>2 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>97-0017282</s0>
</fA47>
<fA60><s1>P</s1>
<s3>CC</s3>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Crystal research and technology : (1979)</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC02 i1="01" i2="X"><s0>001C01A03B</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="GER"><s0>Experimentelle Untersuchung</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Estudio experimental</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Réaction catalytique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Catalytic reaction</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Reacción catalítica</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Oxydation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Oxidation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="GER"><s0>Oxidation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Oxidación</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Indium Phosphure</s0>
<s1>ENT</s1>
<s2>NC</s2>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Indium Phosphides</s0>
<s1>ENT</s1>
<s2>NC</s2>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Indio Fosfuro</s0>
<s1>ENT</s1>
<s2>NC</s2>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Binary compound</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Compuesto binario</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Polissage chimique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Chemical polishing</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="X" l="GER"><s0>Chemisches Polieren</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Pulido químico</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Polissage mécanique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Mechanical polishing</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="X" l="GER"><s0>Mechanisches Polieren</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Pulido mecánico</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Pastille électronique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Wafer</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Pastilla electrónica</s0>
<s5>10</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Métal groupe IIIB Composé</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>07</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>Group IIIB metal Compounds</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>07</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Metal grupo IIIB Compuesto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>07</s5>
</fC07>
<fN21><s1>006</s1>
</fN21>
</pA>
</standard>
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</record>
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